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Follow on Google News | Increase in BandiT Sales Indicates Temperature Monitoring During Thin-Film Deposition Is Crucial“Our customers place a high value on the information kSA BandiT can provide in real time during growth, especially in the low temperature regime where other temperature measurement methods fail,” commented Barry Wissman, Product Development Engineer at k-Space. “We are selling systems configured to measure a wide range of semiconductor band gaps, from GaN at approximately 380 nm to CdTe at approximately 830 nm, to our best-selling systems that operate in the near infrared for materials like GaAs and InP.” The kSA BandiT has recently been highlighted in several journal publications, such as Journal of Electronic Materials, Journal of Crystal Growth, Journal of Vacuum Science and Technology B, and Optics Express. In these articles, scientists worked with materials such as GaAs, InGaAs, InAs, InAlAs, and HgCdTe, allowing real-time measurement of variables such as temperature, film thickness, surface roughness, and growth rate. In Journal of Electronic Materials, Dr. Jan Wenisch of AIM INFRAROT-MODULE GmbH noted that for growth of HgCdTe on GaAs “it was observed that an increase in growth temperature of only 2°C led to an increase in the cadmium fraction of almost 5% for Cd rich compositions” [1] Wenisch, J., et al. in Journal of Electronic Materials (2015): 1-5. End
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