New Vishay -80V Automotive Grade MOSFET is released by New Yorker Electronics
Vishay Siliconix New AEC-Q101-qualified P-Channel -80V TrenchFET MOSFET Reduces Energy Waste and Increases Power Density with Industry-Low On-Resistance
With the lowest on-resistance of any -80V P-Channel device, the new Vishay Siliconix SQJA81EP increases power density and efficiency in automotive applications. The SQJA81EP's on-resistance is 28-percent lower than the closest competing device in the DPAK package — while offering a 50-percent smaller footprint — and 31-percent lower than previous-generation solutions.
The low on-resistance minimizes power losses from conduction while allowing higher output for increased density. The device's -80V rating provides the safety margin required to support several popular input voltage rails, including 12V, 24V, and 48V systems. The Vishay MOSFET's increased power density saves PCB space by reducing the number of components needed in parallel. As a P-Channel device, the SQJA81EP enables simpler gate drive designs that don't require the charge pump needed by its n-channel counterparts.
The gullwing leads allow for increased automatic optical inspection (AOI) capabilities and provide mechanical stress relief for increased board-level reliability. These features make the Vishay P-Channel MOSFET ideal in applications for reverse polarity protection, battery management, high side load switching and LED lighting in automobiles.
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New Yorker Electronics