IXYS 60V TrenchT3 HiPerFET Power MOSFETs by GD Rectifiers

BURGESS HILL, U.K. - May 10, 2018 - PRLog -- IXYS' 60V TrenchT3 HiPerFET Power MOSFETs are ultra low on-resistance, rugged devices for industrial power conversion applications. They feature:

-       Ultra low on-state resistance

-       High current handling capability

-       Avalanche rated

-       Fast body diode

-       175°C operating temperature

-       High power density

-       Available in international standard packages: TO-220, TO-263, TO-247

Key Technology Advantages

TrenchT3 Technology

- Rds(on) as low as 3.1mΩ

- High current handling capability

- Reduction in the number of MOSFETs needed

- Paralleling multiple devices avoided

Avalanche Ruggedness & Fast Body Diode

-       Avalanche rated at high avalanche current levels

-       Junction temperature up to 175°c

-       High efficiency during high-speed switching

GD Rectifiers are a European Distributor for IXYS components, shop our full range of IXYS products by division here - http://www.gdrectifiers.co.uk/products/category/shop_by_m...

Alternatively call GD Rectifiers on: 01444 243 452 or email: enquiries@gdrectifiers.co.uk for a no obligation quote today.