OSI Introduces Low-Noise, High-Sensitivity, High-Speed, 30 µm InGaAs Avalanche Photodiod

 
 
PR - LAPD 1550-30R
PR - LAPD 1550-30R
EDISON, N.J. - May 19, 2014 - PRLog -- Edison, NJ - OSI Laser Diode, Inc. (LDI), an OSI Systems Company, introduces the latest detector in the avalanche photodiode (APD) family, the LAPD 1550-30R.  The low-noise, high-sensitivity, 30 µm indium gallium arsenide (InGaAs) mesa structure joins the company’s 75 and 200 µm APD series. The high speed LAPD 1550-30R operates at 3.5 GHz and features a broad voltage breakdown (Vbr) curve of 30 V (minimum) to 40 V (maximum) with a typical response of 37 volts.

Ideal for applications in range-finding, optical time-domain reflectometers (OTDRs), and high-sensitivity line receivers, the LAPD 1550-30R is housed in a hermetically-sealed 3-pin, TO46 package with a lens cap. OSI Laser Diode’s    low noise, 30 micron InGaAs APD module is RoHS compliant and operates from 1260 nm to 1650 nm with a typical operational wavelength at 1550 nm.  The operating temperature ranges from -40 degrees to 85 degrees C, with a non-operating, storage temperature range from -40 degrees to 100 degrees C.

For more information about OSI Laser Diode’s LAPD 1550-30R for advanced detection applications, please visit www.laserdiode.com (http://www.laserdiode.com/).

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About the Company:  OSI Laser Diode, Inc. (LDI), founded in 1967, is a global leader in laser diode technology, providing advanced optoelectronic products that serve the military/aerospace, telecom/datacom (short and long haul), commercial, industrial, and medical markets.

Contact
Peggy Scarillo
***@osilaserdiode.com
End
Source:OSI Laser Diode, Inc.
Email:***@osilaserdiode.com
Tags:Photodiode, Detector, InGaAs, Avalanche, Technology
Industry:Technology
Location:Edison - New Jersey - United States
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