FIB Circuit Editing, Failure Analysis, ESD Testing: MA-tek Neihu (Taipei), Taiwan.

Aug. 11, 2012 - PRLog -- MA-tek Inc., NeiHu Lab (Taipei) is functioning since July 4th, 2012.
Services offered at Neihu Lab:
■  IC Decap (chemical and laser assisted)
■  IC Circuit Repair (Focused Ion Beam Assisted Etching and Deposition)
■  Non-destructive Analysis (X-ray Imaging, Scanning Acoustic Microscopy, Optical Microscopy)
■  Electrical Failure Analysis (EMMI, InGaAs, OBIRCH, C-AFM)
■  ESD Testing (KetTek MK-1, MK-2, Zapmaster, LatchUp, TPL, Thermal, ESD Gun)

Address：MA-tek NeiHu Lab (Taipei),
                 1F., No.415, Sec. 2, Tiding Blvd., Neihu Dist.,
                 Taipei City 114, Taiwan (R.O.C.)
TEL：+886-2-66175788
Email:  sales@ma-tek.com


■ Focused Ion Beam Assisted Circuit Editing

Focused Ion Beam microscope (FIB) use gallium (Ga) as a metal ion source, coupled with negative electric field (Extractor) traction-the-art small gallium atoms, and the export of gallium ion beam in order to re-focus lens power after a series of changes in the aperture ( Automatic Variable Aperture, AVA) may determine the size of the ion beam, and then after the second focus on the surface of the collision use of physical to specific patterns of processing, single-General of the particle beam FIB (Single Beam FIB), can provide cutting material, Metal deposition, metal etching and selective oxidation has features such as etching. If the combination of field emission electron microscope to conduct real-time observation, the so-called dual-beam FIB (Dual Beam FIB), in addition to direct high-energy ion-beam etching of the functions can be etched by gas-assisted system to help improve the choice of etching material, enhance the etching rate, and direct deposition of specific materials. At present, the gas-assisted etching can be applied to improve the etching rate on polyimide, metal and oxide. The type of gas-assisted deposition, there are platinum (Pt), tungsten (W) and silica (TEOS).
Ref: http://www.ma-tek.com/service_detail.php?path=30  


■ IC Decapsulation:

Prior to FIB circuit editing or failure analysis or structure analysis or reverse engineering, it is often required to partially or fully decapsulate IC.  This can be accomplished using (1) Chemical wet etching
(2) RIE dry etching (3) Mechanical polish (4) Laser assisted etching.

Ic delayer processes are needed for structure analysis (FA) and reverse engineering.  In failure analysis, layer by layer checking/inspection, it can be identified if the defect is caused by process issue such as etching residue, metal crack or broken, oxide defect and poor via connection. In applications of reverse engineering, we can trace back the layout and circuitry. Delayer is the most important technology in sample preparation of IC failure analysis. Ma-tek has earned the confidence and approbation from customer in this technology.


■ Non-destructive Analysis

X-ray Imaging: The imaging principle is to utilize the X-ray which transmitting through the objective and to form the image by CCD. The major purpose is to inspect the metallic material or structure of IC, such as bonding wires, silver glue and lead frame...etc.

SAT: The full name of SAT is Scanning Acoustic Tomography or called SAM (Scanning Acoustic Microscope). In general, the frequency of SAT is higher than 20KHz in semiconductor industry. It can transmit through the solid and liquid objectives with specific thickness and check if composition is abnormal. The medium used in SAT is pure water. The principle is that the probe provide the sound wave and transmit to the specimen by medium of pure water, and induce the reaction of reflection and transmission to form the image from CCD. The selection of probe depends on various thickness and material of specimen.
Ref: http://www.ma-tek.com/service_detail.php?path=41


■ Electrical Failure Analysis:

EMMI and OBIRCH are the most popular instruments for fault isolation. EMMI in MA-tek equipped with conventional Si CCD and advanced InGaAs detectors Combining OBIRCH, electrical failures of IC devices, arising from front-end or back-end defects, can be easily and precisely localized.
MA-tek technical team is composed of many superior professionals well experienced in different fields, especially in IC industries. We offer the most accurate, precise, and efficient analytical services to save your time and cost for products development.

Infrared emission can occur and be detected in a semiconductor device when excessive electron - hole pair recombination occurs. Failures caused by oxide breakdown, ESD damage, Latch-up, impact ionization and saturated transistors can produce excessive electron - hole pairs. By using an infrared detection tool, one can accurately detect and precisely locate such failure sites.

Photoemission in a semiconductor can be achieved through inter-band/intra-band recombination, or Bremsstrahlung process, which results in an infra-red transmission. By using an infra-red detection equipment, it is able to conclusively show the accurate detection and precise location of a failure.The technique is very sensitive to image a broad range of IC's defects. However, it is mandatory to differentiate those photon emitting defects from artifacts of design or testing conditions.
Ref: http://www.ma-tek.com/service_detail.php?path=35


■ ESD Testing

MA-tek provides various ESD testing services such as HBM, MM, socket CDM,  non-socket CDM, latch-up, and TLP testing services. Tests can be performed both in room-temperature and high-temperature testing modes. We provide different types of IC sockets for ESD/Latch-up testing [Ref. MA-tek socket list]. Furthermore, we offer IC packaging services (Au/Al wire bonding, die mount, epoxy, encapsulation), COB and package level tests, system level testing of module, mother board, and electronic system by ESD gun. As per customer requirements and projected/actual technical specifications of products, all ESD tests are conducted by using the latest testing standards viz. MIL-STD, AEC, ESDA, JEDEC, JEITA.  
Ref: http://www.ma-tek.com/service_detail.php?path=49