VORAGO Technologies announces the issuance of Patent titled METHOD FOR FORMING FINFET DEVICE STRUCTURE

AUSTIN, Texas - April 20, 2020 - PRLog -- VORAGO Technologies has announced the issuance to it by the US Patent Office. This latest patent, US Patent Number 10,615,260 titled METHOD FOR FORMING FINFET DEVICE STRUCTURE, is a complement to a previous patent issued to VORAGO Technologies, US Patent Number 10,038,058.

US Patent 10,615,260 is part of the extension of VORAGO's HARDSIL® technology to non-planar CMOS technologies.  It describes methods of efficiently fabricating HARDSIL®-protected FinFET devices using conventional semiconductor fabrication equipment and steps.  HARDSIL® structures formed using the described methods protect the FinFET devices from SEE, Latch-up and TID in radiant and high-temperature environments by directing charge generated by external stimuli away from active device regions.

"This patent represents part of VORAGO's continued commitment to making available cost-effective, radiation-hardened processes and products based on re-use of process and design collateral of existing nodes.  It protects the extension of our proven HARDSIL® technology and methods to FinFET nodes," said Patrice Parris, VORAGO's CTO.

This patent covers the technology VORAGO Technologies has developed that builds radiation-hardened military-grade products used in space and extreme environments.

VORAGO's patented, innovative technology, HARDSIL® (beginning with US Patent 7,304,354), has been proven in multiple process generations at multiple fabs to harden semiconductor circuits without redesign and is scalable to any generation node, including deep sub-micron nodes using FinFETs, as evidenced by US Patents 10,038,058 and 10,615,260.

Incorporating the patented HARDSIL® technology into their own designs and several Texas Instruments products spanning multiple process generations, VORAGO has successfully demonstrated superior hardening in a number of devices including microcontrollers, high density SRAMs, DSPs and AMS parts.

Because the technology is applied at the process-level and does not change existing transistor models, no performance, power or circuit size trade-offs are required. As a result, hardened semiconductor components for extreme environments are now within reach for system designers; a solution with the highest performance in reduced form factors while using much less power. This process allows for engineers and designers to have a wider range of options with the latest state-of-the-art commercial IP that accelerate speed-to-mission, rather than pricey legacy components that sometimes require months to become available.

About VORAGO Technologies:

VORAGO Technologies is a privately held, high technology company based in Austin, Texas with over 14 years of experience in providing radiation-hardened and extreme-temperature solutions for the Hi-rel marketplace. VORAGO's patented HARDSIL® technology uses cost-effective high-volume manufacturing to harden any commercially designed semiconductor component for extreme environment operation, and has created a number of solutions throughout Aerospace, Defense and Industrial applications. VORAGO Technologies opens up a new world of possibilities for your designs, no matter how hostile the environment. www.voragotech.com

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Tags:Radiation Hardened Components, Aerospace, FinFET Technology, Semiconductor Fabrication, Semiconductor Technology, Microcontroller, Hi reliability, Cmos
Industry:Aerospace, Electronics, Defense
Location:Austin - Texas - United States
Subject:Reports
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Page Updated Last on: Apr 20, 2020



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