Marktech Optoelectronics Announces Successful lnP Epitaxial Crystal Technology Development

Industry-Exclusive R&D for Ultra-High-Speed Large-Capacity Signal Processing Applications Supports Emerging 5G Market Sector Needs
By: Embassy Global LLC for Marktech Optoelectronics
 
 
Marktech Optoelectronics Announces 5G R&D Breakthrough
Marktech Optoelectronics Announces 5G R&D Breakthrough
 
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Marktech Optoelectronics

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Latham - New York - US

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LATHAM, N.Y. - May 6, 2019 - PRLog -- Marktech Optoelectronics, Inc. (Marktech), a privately-held, veteran-owned leading designer and manufacturer of standard and custom optoelectronics components and assemblies, including UV, visible, near-infrared, and short-wave infrared emitters, detectors, InP epiwafers and other materials, today announced its successful in-house development of InP epitaxial crystal mass production technologies for ultra-high-speed (5G) large-capacity signal processing applications.

The Marktech R&D efforts were carried out under the direction of Dr. Gako Araki, a 25-year expert in ultra-high-speed InP HBT and HEMT epitaxial crystal growth technologies. A member of the Marktech team since 2010, Dr. Araki's experience further includes a progressive series of related R&D tenures at the New Energy and Industrial Technology Development Organization (NEDO) and NTT Advance Technology Corporation, both in Tokyo, Japan.

Research was carried out in two distinct phases. Phase One consisted of ultra-high-speed (5G) lnP epitaxial crystal growth technology development using small prototype MOCVD equipment (4inch.x4). Phase Two consisted of actual ultra-high-speed (5G) lnP epitaxial crystal manufacturing using large mass-production MOCVD equipment, known as GAKOUS (4inch.x10).  Given that true lnP-HBT epitaxial crystal performance testing requires electrical characteristic evaluations on larger HBT devices, Marktech instead focused R&D efforts on the development of new manufacturing equipment which could produce InP-HBT epitaxial crystals with the necessary uniform quality, size and quality for large-capacity ultra-high-speed (5G) signal processing applications. These goals were successfully achieved via a new crystal manufacturing method: carbon-doped InGaAs growth without hydrogen.

The Marktech evaluation of the small MOCVD prototype derived from this equipment showed favorable performance characteristics. Marktech then performed successful high-frequency HBT electrical characterizations on the prototype with equally favorable results. As a result, Marktech was able to conclude its successful development of new lnP HBT epitaxial crystal growth production equipment, known as MOCVD GAKOUS, whose capabilities offer the necessary prototype growth technology reproducibility and uniformity for manufacturing quality control in ultra-high-speed (5G) lnP epitaxial crystal growth applications.

As a final accompaniment to this R&D, Marktech developed a series of non-destructive electron mobility measurement systems. This included time-resolve photoluminescence testing with infrared wavelength area measurements, a technique which proved useful in the performance of lnGaAs channel layer quality checks, as well as HBT gain estimates by p-lnGaAs base layers during crystal growth and production. Using these techniques, it was determined that the Marktech small MOCVD prototype 4inchx4 exhibited satisfactory performance with new organic materials, independent source injection and a narrow gap placed between the injector and surface to avoid complex surface reactions. As a result, Marktech developed its new MOCVD GAKOUS equipment to produce lnP epitaxial crystals which could offer the same performance and reliability as that of the prototype, yet with sufficient quality and uniformity for larger-scale commercial lnP HBT and HEMT crystal production volumes.

Of this research, Marktech CEO, Mark Campito, notes, "Marktech is proud of the R&D work of Dr. Araki in the area of InP epitaxial crystal mass production technologies for ultra-high-speed (5G) large-capacity signal processing. Our team's commitment to proactive R&D efforts that address diverse or emerging market sector needs has been well-demonstrated over the years, whether that's a 5G application, LiDAR, wearables, or others. We look forward to working in partnership with key 5G industry players to help them achieve their device performance goals."

Founded in 1985, Marktech Optoelectronics has built a strong industry pedigree for R&D excellence. As a renowned optoelectronics engineering, design, and test facility, Marktech's unique core competencies are rooted in its proven capabilities to produce custom LEDs, detector components and assemblies in virtually any-sized quantity. Each Marktech product is designed and manufactured to customer exacting standards and is available with some of the industry's most competitive lead times. The company's engineering team also has the necessary full in-house capabilities to perform complete electrical and optical characteristics testing, as well as end-to-end examinations of all optical components, from die level to finished product designs. Marktech is also a Cree Solution Provider for high-brightness LEDs and materials and is a member of AIM Photonics. For more information about Marktech Optoelectronics and its product offerings, visit www.marktechopto.com.

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Embassy Global LLC
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Tags:Marktech Optoelectronics
Industry:Engineering
Location:Latham - New York - United States
Subject:Products
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