Power Discretes Market to 2016 - Energy Efficiency Initiatives in the Power Sector

Change in Substrate technology used Increasing Product Efficiency.The report covers the technological developments, industry dynamics, information
By: Rajesh Gunnam
 
March 9, 2012 - PRLog -- Substrate technologies used in the manufacturing of power discretes have slowly changed from Silicon (Si) to Silicon Carbide (SiC), gallium nitride on silicon (GaN-on-Si), Gallium Nitride (GaN), and Gallium arsenide (GaAs).

Si was the only material that was used in most of the power semiconductors. But, in order to improve the performance by using the latest compound semiconductor technologies rather than the traditional silicon material in the power transistors, the change in the substrate technology took place. The usage of GaN and SiC in power semiconductors facilitates the systems to use higher power, better efficiency, and wider bandwidth than that is normally obtained by using conventional silicon solutions. This is because, use of GaN and SiC results in improved voltage, gain, broadband performance, drain efficiency and long-term reliability and can help in creating smaller systems.

For continuous running of business activities without any disruptions, the need for infrastructure (data centers) which maintains integrity and functionality of the hosted computer environment is increasing. Data centers are also supported by the uninterruptible power supply (UPS). Power consumed by them is high and so the market is moving towards efficient and robust systems. To enable these features, data centers and UPS systems generally are built with high-performance semiconductor components like IGBTs and Super-Junction power MOSFETs for rectification, battery charging, and DC/AC inverting. As the business for datacenters and UPS increases so does for these power semiconductors. Mr. Joachim Binder, Senior Director Investor Relations, Infineon Technologies in an interview with GBI Research said “Increasing demand of data centers (cloud computing) is one of the key market trends that is influencing the power discretes market.”

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Developments in the automotive sector will increase the demand for power discretes. Conventional gasoline and diesel powered vehicles using fossil fuels are getting replaced with vehicles that use electric power that includes plug-in hybrids, electric vehicles, and fuel cell vehicles. Reduction in the level of carbon emissions has emerged as a priority in order to cope with the global warming and electrical vehicle growth is a result of this initiative. In 2008 at the G8 summit, leaders of the member nations agreed to achieve at least 50% reduction of global emissions by 2050. In the coming few years, nations are expected to shift to sustainable energy sources that do not use fossil fuels. Japan put forth its Cool Earth Initiative and expressed its intention to work towards establishing a low-carbon society with an aim of reducing carbon emissions by 60-80% by the end of 2050.

Electrically operated vehicles will require inverter control of acceleration and deceleration. IGBTs and MOSFETs are the predominant power semiconductors used in this segment with MOSFETs dominating the high switching frequency applications and IGBTs in the low switching frequency range.

GBI Research’s new report, “Power Discretes Market to 2016 - Energy Efficiency Initiatives in Power Sector to Increase Market Demand” provides key information and analysis on the market opportunities in the power discretes industry. The report covers the technological developments, industry dynamics, information on the revenue and volume of the power discretes market, and the market share of the suppliers. The report also provides product - based, region-based and end-use based forecasts up to 2016. The product based forecasts up to 2016 are given for the MOSFETs, IGBTs, rectifiers, thyristors and BJTs. The key market trends for wide range of power discrete applications in ICT, consumer electronics, industrial, automotive and renewable energy sectors are discussed.

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Source:Rajesh Gunnam
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