Berex Granted Patent For RF Power Amplifier Providing Sevo-loop Biasing

By: BeRex
 
SANTA ANA, Calif. - Jan. 9, 2026 - PRLog -- BeRex, Inc. is pleased to announce that it has been granted a patent for its innovative technology titled " for RF POWER AMPLIFIER PROVIDING SEVO-LOOP BIASING " This newly issued patent strengthens BeRex's RF IC design portfolio.

"This patent enables us to control the operating point of RF power amplifiers more accurately by eliminating ambiguities coming from process variations, reducing development time and costs while providing both linear performance and power efficiency improvements," said Taewon Jung, Design Lead at BeRex, Inc. "We are proud to bring this breakthrough technology to the global RF market and further enhance our competitive edge."

The key innovation of this technology lies in its ability to suppress current mismatch in RF power amplifiers caused by channel length modulation, a critical challenge in sub-micron CMOS processes. Conventional current mirror biasing schemes suffer from current copy errors due to mismatches between the drain voltages of the reference stage and the copy stage, making the bias highly sensitive to process, voltage, and temperature (PVT) variations. The proposed approach overcomes this limitation by introducing a feedback mechanism that allows the drain voltage of the reference stage to be set equal to that of the copy stage. By equalizing the drain voltages, the current copy ratio becomes immune to channel length modulation effects and is determined solely by the transistor width ratio, even in deeply scaled CMOS technologies.

This innovation enables stable, repeatable, and process-resilient bias generation, which is essential for reliable RF circuit design in sub-micron processes.
As a result, the technology improves linearity, output stability, and power efficiency of TX RF power amplifiers, ensuring consistent RF performance across a wide range of operating conditions.

BeRex, Inc. remains committed to advancing RF technologies and delivering high-performance, robust solutions to meet the evolving demands of the global market. With this invention, the company further strengthens its leadership in RF power amplifier design.

BeRex, Inc. remains committed to advancing technology and delivering cutting-edge solutions to meet the evolving needs of its customers. With this patent, the company continues to strengthen its position as a leader in the RF amplifier market.

About BeRex

BeRex, Inc., located in Santa Ana, CA, USA, is an independent, wholly-owned subsidiary of BeRex Corp. We specialize in RFIC Front-End Modules for Internet-of-Things (IoT) wireless devices, utilizing popular wireless communication protocols and standards.

Founded in 2004, BeRex leverages almost two decades of experience and expertise in developing the most reliable RF and Microwave components in the industry that enable the efficient transmission of voice, video, and data traffic over leading communications networks worldwide.

Contact:

YC Song

2938 Scott Blvd.
Santa Clara CA 95054, USA

Email. sales@berex.com
End
Source:BeRex
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Tags:BeRex IoT FEM
Industry:Semiconductors
Location:Santa Ana - California - United States
Subject:Awards
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