BeRex Launches BSW6620, BSW6622 Ultra High Isolation, Absorptive RF SPDT Switches

GANGNAM-GU, South Korea - Oct. 21, 2022 - PRLog -- GANGNAM-GU, South Korea - BeRex announces the availability of the BSW6620 and BSW6622 high isolation, wide bandwidth, low insertion loss, 50Ω SPDT (Single-Pole, Double Throw) absorptive RF switches optimized for 5G/4G/3G infrastructure application.

Using a single 2.7V-5.5V supply voltage, the BSW6620 and BSW6622 switches provide a wide 5 to 8000 MHz frequency range when used in 50ohm systems.  They utilize a patent-granted technology that provides the industry's highest isolation (RFc to RFx) of 60dB (BSW6620) and 58dB (BSW6622), together with a low insertion loss of 0.70dB (BSW6620) and 0.80dB (BSW6622) and a high input IP3 of 68dBm (BSW6620) and 64dBm (BSW6622) at 3.5GHz;

The BSW6620 and BSW6622 are available in a 16-lead, 4.0mm x 4.0mm QFN package, have an ESD HBM rating of Class 2 (BSW6620) and Class 1C (BSW6622) and require no external DC blocking capacitors if DC is not presented at the RF port.

Key features

• Frequency band
• BSW6620= 5MHz to 8000MHz
• BSW6622= 5MHz to 8000MHz
• Insertion Loss
• BSW6620= 0.78dB @2GHz, 0.74dB @4GHz, 0.92dB @6GHz
• BSW6622= 0.73dB @2GHz, 0.87dB @4GHz, 1.07dB @6GHz
• Ultra High Isolation

-        RFc to RFx

• BSW6620= 65dB @2GHz, 58dB @4GHz, 54dB @6GHz
• BSW6622= 62dB @2GHz, 58dB @4GHz, 48dB @6GHz

-        RFx to RFx

• BSW6620= 56dB @2GHz, 50dB @4GHz, 46dB @6GHz
• BSW6622= 82dB @2GHz, 72dB @4GHz, 64dB @6GHz
• Supply Voltage
• BSW6620/BSW6622= 2.7V to 5.5V
• Switching time
• BSW6620= 120 to 240ns
• BSW6622= 120 to 220ns
• ESD, HBM
• BSW6620= ±2.0KV @All pins
• BSW6622= ±1.5KV @All pins
• Package
• BSW6620= 4.0mmx4.0mmx0.9mm, 16-Lead QFN
• BSW6622= 4.0mmx4.0mmx0.9mm, 20-Lead QFN

Pricing and Availability

The BSW6620 and BSW6622 are currently available and are competitively priced.  Samples are available upon request.  Additional information about these and other BeRex RF products is available on the company website: www.berex.com

About BeRex

BeRex Corp. was launched in 2004 to design, develop, manufacture, and market compound semiconductors for mobile communication. Operating without any debt since 2007, BeRex has been generating profits every year. In 2008 BeRex entered the US radar satellite communication equipment market by establishing a wholly-owned subsidiary named 'BeRex, Inc.' located in San Jose, California.

Currently BeRex Corp. is diversifying its products and markets using technologies such as 'silicon-germanium semiconductor' and 'silicon insulating film semiconductor' in addition to 'compound semiconductor'. BeRex has exported to 20 countries and is a supplier to hundreds of companies around the world.

For further information, please visit: https://www.berex.com

Contact
sales@berex.com