GeneSiC's Industry Leading 6.5kV SiC MOSFETs - the Vanguard for a New Wave of Applications
GeneSiC releases 6.5kV silicon carbide MOSFETs to lead the forefront in delivering unprecedented levels of performance, efficiency and reliability.
By: GeneSiC Semiconductor
GeneSiC's innovation features a SiC double-implanted metal oxide semiconductor (DMOSFET) device structure with a junction barrier schottky (JBS) rectifier integrated into the SiC DMOSFET unit cell. This leading-edge power device can be used in a variety of power conversion circuits in the next generation of power conversion systems. Other significant advantages include more efficient bi-directional performance, temperature independent switching, low switching and conduction losses, reduced cooling requirements, superior long-term reliability, ease of paralleling devices and cost benefits. GeneSiC's technology offers superior performance and also has the potential to reduce the net SiC material footprint in power converters.
"GeneSiC's 6.5kV SiC MOSFETs are designed and fabricated on 6-inch wafers to realize low on-state resistance, highest quality, and superior price-performance index. This next-generation MOSFET technology featuring an on-chip integrated JBS diode promises exemplar performance, superior ruggedness and long-term reliability for medium-voltage power conversion applications"
GeneSiC's 6.5kV G2R™ SiC MOSFET technology features -
• High avalanche (UIS) and short circuit ruggedness
• Superior QG x RDS(ON) figure of merit
• Temperature independent switching losses
• Low capacitances and low gate charge
• Low losses at all temperatures
• Normally-off stable operation up to 175°C
• +20 V / -5 V gate drive
For datasheet and other resources, visit - www.genesicsemi.com/