- May 14, 2019
-- Semiconductor technology is evolving at an exponential rate. To support the growth, manufacturers are always looking to shrink the size of devices and chips with the abundance of features available in a small form factor. But as far as reducing the size of a transistor is concerned, Si is posing a difficulty. We are reaching close to the theoretical limit beyond which we cannot reduce the size of the Si transistor courtesy Quantum Tunneling Effect. GaN is an ultra-wide band gap semiconductor with a band gap of 3.6eV, much higher than Si, which makes GaN suitable for higher voltages than Si can survive.
Copperpod IP's latest report on GaN technology uses seminal GaN patents to show the state of the art. Samsung holds the maximum number of patents for GaN. Dominant players of the current GaN market include Samsung, NXP Semiconductors, Fujitsu Ltd., Texas Instruments, GaN Systems, Inc., Efficient Power Conversion Corporation, Inc and Toshiba Corporation. Efficient Power Conversion Corporation, in particular, has been developing numerous products ranging from FETs to development boards with GaN and is the leader of the market with 19.2% share in the market.
Read the report at: https://www.copperpodip.com/