GaN to Dominate LED Market by 2013 says New Report
Report Buyer, the online destination for business intelligence for major industry sectors, has added a new report highlighting the strengths and weaknesses of GaN technology over the current established Epiwafer or ELO technologies.
Gallium nitride (GaN) is a very hard material commonly used in bright LEDs since the 1990s. According to the report the GaN market is mostly driven by blue laser diode production and related applications such as high-density data storage. The market has been strongly boosted by bluray players and game stations which are currently in strong demand.
The 125 page report describes recent advances in crystalline quality as well as new opportunities offered by non-polar and semi-polar GaN material. From 2011 ultra-high brightness (UHB) LED's will boost GaN production and 2013 will see the introduction of new power devices based on GaN. However these new technologies will only be possible if the cost of GaN production is severely reduced. The pricing of bulk-GaN will have to compete with 4” and 6” SiC offers as well as GaN-on-Silicon alternate technology. The report forecasts that with the correct pricing the demand for bulk GaN in LED lighting applications will rapidly dominate the market from 2013.
The report “Bulk GaN Market 2009” is available from Report Buyer at: http://www.reportbuyer.com/
Report Buyer product ID: YOL00108
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