GeneSiC Releases 25 mOhm/1700 V Silicon Carbide Transistors

DULLES, Va. - Oct. 27, 2014 - PRLog -- GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of a family of low on-resistance 1700V and 1200 V SiC Junction Transistors in TO-247 packages. The use of high voltage, high frequency, high temperature and low on-resistance capable SiC Junction Transistors will increase conversion efficiency and reduce the size/weight/volume of power electronics applications requiring higher bus voltages. These devices are targeted for use in a wide variety of applications including DC microgrids, Vehicle Fast chargers, server, telecom and networking power supplies, uninterruptable power supplies, solar inverters, Wind power systems, and industrial motor control systems.

SiC Junction Transistors (SJT) offered by GeneSiC exhibit ultra-fast switching capability (similar to that of SiC MOSFETs), a square reverse biased safe operation area (RBSOA), as well as temperature-independent transient energy losses and switching times. These switches are gate-oxide free, normally-off, exhibit positive temperature co-efficient of on-resistance, and are capable of being driven by commercially gate drivers, unlike other SiC switches. Unique advantages of the SJT in contrast to other SiC switches is its higher long term reliability, >10 usec short circuit capability, and superior avalanche capability

"These improved SJTs offer much higher current gains (>100), highly stable and robust performance as compared to other SiC switches. GeneSiC’s SJTs offer extremely low conduction losses at rated currents as superior turn-off losses in power circuits. Utilizing the unique device and fabrication innovations, GeneSiC’s Transistor products help designers achieve a more robust solution," said Dr. Ranbir Singh, President of GeneSiC Semiconductor.

1700 V SiC Junction Transistor released

25 mOhms (GA50JT17-247), 65 mOhms (GA16JT17-247), 220 mOhms (GA04JT17-247)
Current Gain (hFE) >90
Tjmax = 175^oC
Turn On/Off;  Rise/Fall Times <30 nanoseconds typical.

1200 V SiC Junction Transistor released

25 mOhms (GA50JT12-247), 120 mOhm (GA10JT12-247), 210 mOhms (GA05JT12-247)
Current Gain (hFE) >90
Tjmax = 175^oC
Turn On/Off;  Rise/Fall Times <30 nanoseconds typical.

All devices are 100% tested to full voltage/current ratings and housed in Halogen-Free, RoHS compliant TO-247 packages. The devices are immediately available from GeneSiC’s Authorized Distributors.

About GeneSiC Semiconductor Inc.

GeneSiC Semiconductor Inc. is a leading innovator in high-temperature, high-power and ultra-high-voltage silicon carbide (SiC) devices, and global supplier of a broad range of power semiconductors. Its portfolio of devices includes SiC-based rectifier, transistor, and thyristor products, as well as Silicon rectifier products. GeneSiC has developed extensive intellectual property and technical knowledge that encompasses the latest advancements in SiC power devices, with products targeted towards alternative energy, automotive, down ole oil drilling, motor control, power supply, transportation, and uninterruptible power supply applications. GeneSiC has obtained numerous research and development contracts from US Government agencies, including the ARPA-E, Department of Energy, Navy, Army, DARPA, DTRA, and the Department of Homeland Security, as well as major government prime contractors. In 2011, the company won the prestigious R&D100 award for commercializing ultra-high voltage SiC Thyristors.

For more information, please visit http://www.genesicsemi.com/commercial-sic/sic-junction-tr...