MONTREAL, QUEBEC — IGNIS Innovation Inc., a world leader in the design and development of thin film transistor circuits and driving algorithms for Active Matrix Organic Light Emitting Diodes (AMOLED), demonstrated the latest achievements of its industry leading AdMoTM (Advanced Mobile) backplane technology for amorphous silicon thin film transistors (TFT) at the Society for Information Display, Display Week Conference and Exhibition, from June 2-4, 2009, in San Antonio, TX, USA. IGNIS exhibited a high resolution 2.2” QVGA (181ppi) demo with lifetime and uniformity performance that is better than its commercial polysilicon counterpart. In extensive in-house lifetime testing, IGNIS demonstrated device lifetimes of over 50,000hrs , making them suitable for any mobile or handheld application, such as smartphones and A/V players. In addition, the AdMoTM technology is amenable to very high resolutions (250-300ppi)
“AdMoTM technology and our 2.2” demo prove that an amorphous silicon backplane can and does work for AMOLED displays. This fact will lead to explosive growth in the industry since now a backplane based on common LCD technology can also be used for AMOLED and sourced from any LCD plant in the world. This is a major breakthrough and we look forward to working together with our customers in rapidly growing and shaping the AMOLED industry using AdMoTM and amorphous silicon backplanes”, said Paul Arsenault, President and CEO of IGNIS.
IGNIS has shown its AdMoTM technology together with other display prototypes such as a segment of a 32” 1080p display using MaxLifeTM compensating technology for HDTV and other large area applications.
Contact details for IGNIS are as follows:
Contact: Feng Li
Telephone:
Email:
Address:



